RM2.10
IRF640N 200V 18A Power MOSFET [TO-220]
Price RM2.10
Product SKU 16-08-0-028-00
Brand OEM
Size (L x W x H) 10 mm x 10 mm x 10 mm
Availability 93
Quantity
Description
Highlight
  • NPN power transistor in TO-220
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements

[Package Includes]
1x IRF640N 200V 18A Power MOSFET [TO-220]

[Overview]
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications 

[Feature]

  • NPN power transistor in TO-220
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements

[Specification]

  • Please refer datasheet

[Related Product]

  • All type MOSFET

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What's in the box

1x IRF640N 200V 18A Power MOSFET [TO-220]

Tags: mosfet ic