- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 80V
- Power Dissipation Pd: 12.5W
- DC Collector Current: 1.5A
- DC Current Gain hFE: 63hFE
- Transistor Case Style: TO-126
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
RM0.80
- Type: NPN
- Collector-Emitter Voltage: 400 V
- Collector-Base Voltage: 500 V
- Emitter-Base Voltage: 6 V
- Collector Current: 0.3 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 50 to 200
- Transition Frequency: 50 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
RM0.50
- NPN power transistor in TO-220
- New enhanced series
- High switching speed
- hFE improved linearity
- hFE Grouping
RM0.80
- PNP power transistor in TO-220
- New enhanced series
- High switching speed
- Suitable for linear and swithing industrial equipment
RM0.75
- NPN power transistor in TO-220
- New enhanced series
- High switching speed
- hFE improved linearity
- hFE Grouping
RM0.80
- PNP power transistor in TO-220
- New enhanced series
- High switching speed
- Suitable for linear and swithing industrial equipment
RM0.80
- NPN General Purpose Amplifier
- NPN General Purpose Switching
- Collector Base Voltage: 30v
- Collector Emitter Voltage: 30v
- Emitter Base Voltage: 5v
RM1.20