- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 75°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
RM3.50
- Power MOSFET in TO-220
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
RM2.00
- NPN power transistor in TO-220
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
RM2.10
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
RM3.90
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
RM2.20